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DG417/418/419
Vishay Siliconix
Precision CMOS Analog Switches
DESCRIPTION
The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Vishay Siliconix's high voltage silicon gate (HVSG) process. Break-beforemake is guaranteed for the DG419, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG417 and DG418 respond to opposite control logic levels as shown in the Truth Table.
FEATURES
* * * * * * 15 V Analog Signal Range On-Resistance - rDS(on): 20 Fast Switching Action - tON: 100 ns Ultra Low Power Requirements - PD: 35 nW TTL and CMOS Compatible MiniDIP and SOIC Packaging
Pb-free Available
RoHS*
COMPLIANT
* 44 V Supply Max Rating BENEFITS
* * * * * * Wide Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability
APPLICATIONS
* * * * * * * Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drives
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417 Dual-In-Line and SOIC
S NC GND V+ 1 2 3 4 Top View 8 7 6 5 D VIN VL
TRUTH TABLE
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V DG417 ON OFF DG418 OFF ON
DG419 Dual-In-Line and SOIC
D S1 GND V+ 1 2 3 4 Top View 8 7 6 5 S2 VIN VL
TRUTH TABLE - DG419
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V SW1 ON OFF SW2 OFF ON
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70051 S-71241-Rev. F, 25-Jun-07 www.vishay.com 1
DG417/418/419
Vishay Siliconix
ORDERING INFORMATION
Temp Range DG417/DG418 Package Part Number DG417DJ DG417DJ-E3 DG418DJ DG418DJ-E3 DG417DY DG417DY-E3 DG417DY-T1 DG417DY-T1-E3 8-Pin Narrow SOIC DG418DY DG418DY-E3 DG418DY-T1 DG418DY-T1-E3 DG419 8-Pin Plastic MiniDIP - 40 to 85 C 8-Pin Narrow SOIC DG419DJ DG419DJ-E3 DG419DY DG419DY-E3 DG419DY-T1 DG419DY-T1-E3
8-Pin Plastic MiniDIP
- 40 to 85 C
ABSOLUTE MAXIMUM RATINGS
Parameter Voltages Referenced V+ to VGND VL Digital Inputs , VS, VD Current , (Any Terminal) Continuous Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (AK Suffix) (DJ, DY Suffix) 8-Pin Plastic MiniDIPc Power Dissipation (Package)
b a
Limit 44 25 (GND - 0.3) to (V+) + 0.3 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 400 400 600
d
Unit
V
mA C
8-Pin Narrow SOIC
e
mW
8-Pin CerDIP Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 75 C. d. Derate 6.5 mW/C above 75 C. e. Derate 12 mW/C above 75 C.
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Document Number: 70051 S-71241-Rev. F, 25-Jun-07
DG417/418/419
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL VVIN Level Shift/ Drive V+ GND D
V-
Figure 1.
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Symbol VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) V+ = 16.5, V- = - 16.5 V VD = 15.5 V VS = 15.5 V DG417 DG418 DG419 Channel Off Leakage Current Digital Control Input Current VIN Low Input Current VIN High Dynamic Characteristics Turn-On Time Turn-Off Time Transition Time Break-Before-Make Time Delay (DG403) Charge Injection Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF tTRANS tD Q CS(off) CD(off) CD(on) f = 1 MHz, VS = 0 V DG417 DG418 DG417 DG418 DG419 RL = 300 , CL = 35 pF VS = 10 V See Switching Time Test Circuit RL = 300 , CL = 35 pF VS1 = 10 V, VS2 = 10 V RL = 300 , CL = 35 pF VS1 = VS2 = 10 V DG417 DG418 DG417 DG418 DG419 DG419 Room Full Room Full Room Full Room Room Room Room Room Room 13 60 8 8 pF 30 35 www.vishay.com 3 5 100 60 175 250 145 210 175 250 5 pC 175 250 145 210 175 250 ns V+ = 16.5 V, V- = - 16.5 V VS = VD = 15.5 V DG417 DG418 DG419 IS = - 10 mA, VD = 12.5 V V+ = 13.5 V, V- = - 13.5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Full Room Full Room Full Room Full Room Full Room Full Room Full Full Full 20 - 0.1 - 0.1 - 0.1 - 0.4 - 0.4 - 0.25 - 20 - 0.25 - 20 - 0.75 - 60 - 0.4 - 40 - 0.75 - 60 - 0.5 - 0.5 Typc A Suffix - 55 to 125 C Mind - 15 Maxd 15 35 45 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 0.5 0.5 - 0.25 -5 - 0.25 -5 - 0.75 - 12 - 0.4 - 10 - 0.75 - 12 - 0.5 - 0.5 D Suffix - 40 to 85 C Mind - 15 Maxd 15 35 45 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 0.5 0.5 Unit V
nA
ID(on)
IIL IIH
0.005 0.005
A
CL = 10 nF, Vgen = 0 V, Rgen = 0
f = 1 MHz, VS = 0 V
Document Number: 70051 S-71241-Rev. F, 25-Jun-07
DG417/418/419
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current Symbol VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Room Full Room Full Room Full Room Full Typc 0.001 - 0.001 0.001 - 0.0001 -1 -5 -1 -5 1 5 -1 -5 A Suffix - 55 to 125 C Mind Maxd 1 5 -1 -5 1 5 D Suffix - 40 to 85 C Mind Maxd 1 5 A Unit
I+ IIL IGND V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V
SPECIFICATIONS FOR UNIPOLAR SUPPLIESa
Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current tON tOFF tD Q RL = 300 , CL = 35 pF, VS = 8 V See Switching Time Test Circuit DG419 Only RL = 300 , CL = 35 pF CL = 10 nF, Vgen = 0 V, Rgen = 0 Room Room Room Room 110 40 60 5 pC ns Symbol VANALOG rDS(on) IS = - 10 mA, VD = 3.8 V V+ = 10.8 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Full Room 40 Typc A Suffix - 55 to 125 C Mind 0 Maxd 12 D Suffix - 40 to 85 C Mind 0 Maxd 12 Unit V
I+ IIL IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V
Room Room Room Room
0.001 - 0.001 A 0.001 - 0.001
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 70051 S-71241-Rev. F, 25-Jun-07
DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
50 ID = - 10 mA 40 30 8V r DS(on) () 10 V 12 V 15 V 20 20 V 10 r DS(on) () 30 25 C - 55 C 10 5V TA = 125 C 40
20
0 - 20 - 15 - 10 -5 0 5 10 15 20
0 - 15 - 10 -5 0 5 10 15
VD - Drain Voltage (V)
VD - Drain Voltage (V)
rDS(on) vs. VD and Supply Voltage
30 V+ = 15 V V- = - 15 V VL = 5 V DG417/418: I D(off), IS(off) DG419: I S(off) 100 I (pA) 0 Q (pC) 200
rDS(on) vs. Temperature
20
150
V+ = 16.5 V V- = - 16.5 V VL = 5 V VIN = 0 V
CL = 10 nF 1 nF
10
500 pF
50 - 10 DG417/418: I D(on) DG419: I D(off), ID(on) 0
100 pF
- 20
- 30 - 15 - 10 -5 0 5 10 15
- 50 - 15 - 10 -5 0 5 10 15 VD or V S - Drain or Source Voltage (V)
VS - Source Voltage (V)
Leakage Currents vs. Analog Voltage
Drain Charge Injection
3.5 3.0 2.5
V TH (V)
2.0 1.5 1.0 0.5 0 (V+) 5 10 15 20 25
VL = 7 V
VL = 5 V
30
35
40
Input Switching Threshold vs. Supply Voltages
Document Number: 70051 S-71241-Rev. F, 25-Jun-07
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DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
120 V+ = 15 V, V- = - 15 V VL = 5 V, V IN = 3 V Pulse tON 140 120 100 t ON , t OFF (ns) 80 (dB) tOFF 60 80 60 40 40 20 20 0 0 20 40 60 80 100 120 100 1k 10 k 100 k 1M 10 M 100 M V+ = 15 V V- = - 15 V VL = 5 V DG419 Source 1 DG417/418/419 Source 2
100
0 - 55 - 40 - 20
Temperature (C)
f - Frequency (Hz)
Switching Time vs. Temperature
130 120 110 70 t ON , t OFF (ns) t ON , t OFF (ns) V- = 0 V VL = 5 V VIN = 3 V 60 tON 100
Crosstalk and Off Isolation vs. Frequency
80
tON 90 80 70 60 V- = 0 V VL = 5 V VIN = 3 V
50 tOFF 50 40 40 10 30 11 12 13 14 15 16 10 11 12 13 14 15 16 Supply Voltage (V) V+ Supply Voltage (V) tOFF
Switching Time vs. Supply Voltages
10 mA V+ = 15 V, V- = - 15 V VL = 5 V, V IN = 5 V, 50 % D Cycle 1 mA 10 nA I SUPPLY I SUPPLY 100 A I+, I10 A IL 10 pA 1 A 1 pA 100 nA 100 1k 10 k 100 k 1M 10 M 0.1 pA - 55 - 40 1 nA 100 pA 1 A 100 nA
Switching Time vs. V+
V+ = 16.5 V, V- = - 16.5 V VL = 5 V, V IN = 0 V
I+, I-
IGND
- 20
0
20
40
60
80
100
120
f - Frequency (Hz)
Temperature (C)
Power Supply Currents vs. Switching Frequency
Supply Current vs. Temperature
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Document Number: 70051 S-71241-Rev. F, 25-Jun-07
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with the switch on.
+5V + 15 V Logic Input VL 10 V S IN GND VRL 300 CL 35 pF V+ D 0V VO Switch Input VS VO 90 % tOFF
3V 50 %
tr < 20 ns tf < 20 ns
- 15 V CL (includes fixture and stray capacitance) VO = V S RL RL + rDS(on)
Switch Output
0V tON
Note:
Logic input waveform is inverted for switches that have the opposite logic sense.
Figure 2. Switching Time (DG417/418)
+5V
+ 15 V Logic Input 3V 0V D VO RL 300 CL 35 pF VS1 = VS2 VO Switch Output CL (includes fixture and stray capacitance) - 15 V 0V tD tD tr < 20 ns tf < 20 ns
VL VS1 VS2 S1 S2
V+
90 %
IN GND V-
Figure 3. Break-Before-Make (DG419)
+5V VL VS1 VS2 S1 S2 IN GND VV+
+ 15 V 3V 50 % 0V tTRANS VS1 V01 Switch Output VS2 V02 10 % 90 % tTRANS tr < 20 ns tf < 20 ns
D VO RL 300 CL 35 pF
Logic Input
- 15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Figure 4. Transition Time (DG419)
Document Number: 70051 S-71241-Rev. F, 25-Jun-07
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DG417/418/419
Vishay Siliconix
TEST CIRCUITS
+5V
- 15 V
VO VO VO CL 10 nF INX OFF ON OFF
Rg
VL S IN
V+ D
3V GND V-
Q = VO x CL
- 15 V
Figure 5. Charge Injection
+5V C VL VS Rg = 50 S1
+ 15 V C C V+ D VS 50 Rg = 50 IN 0 V, 2.4 V S
+5V
+ 15 V C
VL
V+
D
VO
VO
S2
RL
RL 0.8 V
IN GND VC
GND
V-
C
- 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass VS VO VS VO
Off Isolation = 20 log
Figure 6. Crosstalk (DG419)
Figure 7. Off Isolation
+5V C VL VS Rg = 50 IN 0 V, 2.4 V GND S
+ 15 V C V+ D VO RL
V-
C
- 15 V
Figure 8. Insertion Loss
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Document Number: 70051 S-71241-Rev. F, 25-Jun-07
DG417/418/419
Vishay Siliconix
TEST CIRCUITS
+5V C VL
+ 15 V + 15 V C V+ S V+ S2 Meter S1 Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz C NC
DG417/418
0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent C f = 1 MHz 0 V, 2.4 V
DG419
IN
D GND V-
D2 GND V-
D1 C
- 15 V
- 15 V
Figure 9. Source/Drain Capacitances
APPLICATIONS
Switched Signal Powers Analog Switch The analog switch in Figure 10 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 kHz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. A positive input pulse turns on the clamping diode D1 and charges C1. The charge stored on C1 is used to power the chip; operation is satisfactory because the switch requires less than 1 A of stand-by supply current. Loading of the signal source is imperceptible. The DG419's on-resistance is a low 100 for a 5 V input signal.
D1 V+ D Input S2 VL S1
C1 0.01 F
VOUT
IN Control
RL2 10 k
DG419
GND V-
RL1 10 k
Figure 10. Switched Signal Powers Remote SPDT Analog Switch
Document Number: 70051 S-71241-Rev. F, 25-Jun-07
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DG417/418/419
Vishay Siliconix
APPLICATIONS
Micropower UPS Transfer Switch When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 10. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of A are sufficient to retain memory data. When the 5 V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new change of state in the analog switch, restoring normal operation. Programmable Gain Amplifier The DG419, as shown in Figure 11, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by rDS(on) variation as a function of analog signal amplitude. GaAs FET Driver The DG419, as shown in Figure 12 may be used as a GaAs FET driver. It translates a TTL control signal into - 8 V, 0 V level outputs to drive the gate.
D1 VCC (5 V) R1 VSENSE 453 k Memory D
V+
SW1
VL S + 3 V Li Cell - V-
DG417
IN
R2 383 k
GND
Figure 11. Micropower UPS Circuit
+5V
DG419
S1 S2 IN D
R1 VL R2 S1 S2 D VOUT V+ GaAs FET
5V VIN VOUT + GND
DG419
V-
-8V
Figure 12. Programmable Gain Amplifier
Figure 13. GaAs FET Driver
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70051.
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Document Number: 70051 S-71241-Rev. F, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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